Epitaxial Ferroelectric HfO<sub>2</sub> Films: Growth, Properties, and Devices

نویسندگان

چکیده

About ten years after ferroelectricity was first reported in doped HfO2 polycrystalline films, there is tremendous interest this material and ferroelectric oxides are once again the spotlight of memories industry. Great efforts being made to understand control properties. Epitaxial which have fewer defects a more controlled microstructure than can be very useful for purpose. films been much less investigated, but report 2015 significant progress has achieved. This review summarizes discusses main advances on epitaxial HfO2, considering growth, study structural properties, identification phase, fabrication devices. We hope will help researchers investigating HfO2. It also extend community, now basically focused samples, films.

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ژورنال

عنوان ژورنال: ACS applied electronic materials

سال: 2021

ISSN: ['2637-6113']

DOI: https://doi.org/10.1021/acsaelm.1c00110